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| SMD Type Complementary 30-V (D-S) MOSFET KI1539DL Transistors IC SOT-363 +0.1 1.3-0.1 0.65 Unit: mm PIN Configuration +0.15 2.3-0.15 0.525 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 0.25 0.3 0.16 0.23 0.27 0.14 Symbol VDS VGS ID 0.63 0.45 0.54 0.43 1 -0.25 0.3 0.16 -55 to 150 -0.23 0.27 0.14 N-Channel 5 secs Steady State 30 20 -0.45 -0.32 -0.42 -0.31 P-Channel 5 secs Steady State -30 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) *Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 /W Unit Steady State Steady State +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 www.kexin.com.cn 1 SMD Type KI1539DL Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85 VDS = -24 V, VGS = 0 V, TJ = 85 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -15 V, VGS = -10 V, ID = 0.42A N Channel VDD = 15 V, RL = 30 ID= 0.5 A, VGEN = 10V, Rg = 6 P-Channel VDD = -15 V, RL = 30 ID= -0.5 A, VGEN = -10 V, Rg = 6 IF = 0.23 A, di/dt = 100 A/ IF = -0.23 A, di/dt = 100 A/ s s P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 Min 1.0 -1.0 Transistors IC Typ Max Unit V 100 100 1 -1 5 -5 A A 0.410 0.480 0.800 0.940 0.600 0.700 1.5 0.75 0.5 0.8 -0.86 0.86 0.9 0.24 0.21 0.08 0.17 5 4 8 8 8 5 7 7 15 20 10 10 15 15 15 10 15 15 30 40 ns 1.2 -1.2 1.4 1.4 pC 1.700 mS V nA VGS = 10 V, ID = 0.59A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -0.42A VGS = 4.5 V, ID = 0.2A VGS = -4.5 V, ID = -0.2A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 15 V, ID = 0.59A VDS = -15 V, ID = - 0.42A IS = 0.23A, VGS = 0 V IS = -0.23A, VGS = 0 V N-Channel VDS = 15 V, VGS = 10 V, ID = 0.59A 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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